Quantum Transport — NEGF

Parameters

System model

Number of atoms N

Hopping integral t (eV)

On-site energy ε₀ (eV)

Broadening η (eV)

Left contact Γ_L (eV)

Right contact Γ_R (eV)

Disorder W (eV) (0 = clean chain)

E_min (eV)

E_max (eV)

Energy points

Voltage V (V)

Transmission Coefficient T(E)

Conductance G(E) [G₀]

Self-Assessment

Q1. In the Landauer formula G = G₀·T(E_F), G₀ = ?

A 2e²/h ≈ 7.75×10⁻⁵ S

B e²/h ≈ 3.87×10⁻⁵ S

C e/h

D 1 Ω⁻¹

Q2. T(E) = 1 means:

A Electron is fully reflected

B Electron is fully transmitted — ballistic transport

C System is superconducting

D Tunneling occurs

Q3. In NEGF, Σ (Sigma) represents:

A System energy

B Temperature

C Influence of the contact (lead) on the device — self-energy

D Number of electrons

Q4. A peak in LDOS(i, E) at atom i means:

A Atom i is rotating

B An electronic state at energy E is localized at atom i

C Conductance is maximum

D Barrier is zero