I-V Characteristic
I(V) characteristic calculation: p-n junction, tunnel diode, Schottky contact, molecular junction, nanowire
Parameters
I(V) — Current-Voltage Characteristic
Differential Conductance dI/dV(V)
log|I(V)| — Logarithmic Scale
Self-Assessment
Q1. In the Shockley equation, V_T = kT/e represents:
A
Threshold voltage
B
Thermal voltage — ≈25.85 mV at 300 K
C
Saturation voltage
D
Breakdown voltage
Q2. NDR (Negative Differential Resistance) means:
A
Negative resistance — R < 0
B
Current decreases as voltage increases — dI/dV < 0
C
Superconductivity
D
Violation of Ohm's law
Q3. A Schottky contact differs from a p-n junction because:
A
Only in size
B
No p-type semiconductor — barrier forms at the metal-semiconductor interface
C
Schottky is much slower
D
Schottky has no forward bias
Q4. Does ballistic nanowire resistance depend on L?
A
Yes, R ∝ L (Ohm's law)
B
Yes, R ∝ L²
C
No — R = R_Q/N, independent of L
D
No, R = 0 always